发明名称 |
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES |
摘要 |
A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure. |
申请公布号 |
US2017110474(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615392521 |
申请日期 |
2016.12.28 |
申请人 |
LEE CHANGHYUN;PARK CHANJIN;SON BYOUNGKEUN;CHANG SUNG-IL |
发明人 |
LEE CHANGHYUN;PARK CHANJIN;SON BYOUNGKEUN;CHANG SUNG-IL |
分类号 |
H01L27/11582;H01L29/792;H01L29/06 |
主分类号 |
H01L27/11582 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |