发明名称 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES
摘要 A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.
申请公布号 US2017110474(A1) 申请公布日期 2017.04.20
申请号 US201615392521 申请日期 2016.12.28
申请人 LEE CHANGHYUN;PARK CHANJIN;SON BYOUNGKEUN;CHANG SUNG-IL 发明人 LEE CHANGHYUN;PARK CHANJIN;SON BYOUNGKEUN;CHANG SUNG-IL
分类号 H01L27/11582;H01L29/792;H01L29/06 主分类号 H01L27/11582
代理机构 代理人
主权项
地址 Suwon-si KR