SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

In general, according to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first sub-conductive layer, a first insulating film. One portion of the first conductive layer overlaps at least one portion of the first sub-conductive layer in the first direction. One other portion of the first conductive layer overlaps at least one portion of the second conductive layer in the first direction. One portion of the first insulating film overlaps at least one portion of the second conductive layer in the second direction. The One portion of the first insulating film overlaps one portion of the first sub-conductive layer in the second direction. The second conductive layer overlap one other portion of the first insulating film in a direction intersecting the second direction.

主权项

1. A semiconductor memory device, comprising:
a first conductive layer; a second conductive layer provided to be separated from the first conductive layer in a first direction; a first sub-conductive layer provided to be separated from the second conductive layer in a second direction intersecting the first direction; and a first insulating film provided between the second conductive layer and the first sub-conductive layer, one portion of the first conductive layer overlapping at least one portion of the first sub-conductive layer in the first direction, one other portion of the first conductive layer overlapping at least one portion of the second conductive layer in the first direction, one portion of the first insulating film overlapping at least one portion of the second conductive layer in the second direction, the one portion of the first insulating film overlapping one portion of the first sub-conductive layer in the second direction, the second conductive layer overlapping one other portion of the first insulating film in a direction intersecting the second direction.