| 发明名称 |
MEMORY DEVICE AND FABRICATION METHOD OF THE SAME |
| 摘要 |
A device is disclosed that includes a memory bit cell, a first word line, a pair of metal islands and a pair of connection metal lines. The first word line is disposed in a first metal layer and is electrically coupled to the memory bit cell. The pair of metal islands are disposed in the first metal layer at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are disposed in a second metal layer and are configured to electrically couple the metal islands to the memory bit cell respectively. |
| 申请公布号 |
US2017110461(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615186446 |
申请日期 |
2016.06.18 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
FUJIWARA Hidehiro;CHAN Wei-Min;LIN Chih-Yu;CHEN Yen-Huei;LIAO Hung-Jen |
| 分类号 |
H01L27/11;H01L21/768;H01L21/321;H01L23/528 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
a memory bit cell; a word line disposed in a first metal layer and electrically coupled to the memory bit cell; a pair of metal islands disposed in the first metal layer at opposite sides of the word line and electrically coupled to a power supply; and a pair of connection metal lines disposed in a second metal layer and configured to electrically couple the metal islands to the memory bit cell respectively. |
| 地址 |
HSINCHU TW |
