INTEGRATED BOUND-MODE SPECTRAL/ANGULAR SENSORS

摘要

A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

主权项

1. A 2-D sensor array, comprising:
a semiconductor substrate, a plurality of pixels disposed on the semiconductor substrate, wherein each of the plurality of pixels comprise:
at least one coupling region and at least one junction region;a slab waveguide structure disposed on the semiconductor substrate and extending from the at least one coupling region to the at least one junction region, and comprising a confinement layer disposed between a first cladding layer and a second cladding layer, wherein the first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer; andat least one coupling structure disposed in the coupling region and within the slab waveguide, the coupling structure comprising at least two materials having different indices of refraction, and arranged as a grating defined by a grating period,wherein the junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.