| 发明名称 |
COMPOUND SEMICONDUCTOR SUBSTRATE |
| 摘要 |
A compound semiconductor substrate according to the present invention includes a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an FWHM of an X-ray diffraction peak of the buffer layer obtained by an X-ray diffraction rocking curve measurement is 800 arcsec or less. |
| 申请公布号 |
US2017110414(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615284781 |
申请日期 |
2016.10.04 |
| 申请人 |
COORSTEK KK |
发明人 |
ABE Yoshihisa;ERIGUCHI Kenichi;OMORI Noriko;OISHI Hiroshi;KOMIYAMA Jun |
| 分类号 |
H01L23/00;H01L29/205;H01L29/778;C30B29/40;H01L29/66;H01L21/02;H01L21/66;C30B25/18;H01L29/20;H01L29/04 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A compound semiconductor substrate comprising:
a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an FWHM of an X-ray diffraction peak of the buffer layer is 800 arcsec or less. |
| 地址 |
Tokyo JP |
