发明名称 ELECTROSTATIC CHUCK DESIGN FOR COOLING-GAS LIGHT-UP PREVENTION
摘要 An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes. The dielectric block is situated above the baseplate and supports the wafer when present. The first electrode is embedded in the top half of the dielectric block, where the top surface of the first electrode is substantially parallel to a top surface of the dielectric block, and the first electrode is connected to a DC power source. Further, the second electrode is embedded in a bottom half of the dielectric block, the second electrode being electrically connected to the first electrode, where the bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.
申请公布号 US2017110356(A1) 申请公布日期 2017.04.20
申请号 US201514887166 申请日期 2015.10.19
申请人 Lam Research Corporation 发明人 Matyushkin Alexander;Marakhtanov Alexei;Holland John Patrick;Gaff Keith;Kozakevich Felix
分类号 H01L21/683;H01L21/687 主分类号 H01L21/683
代理机构 代理人
主权项 1. A wafer support structure in a chamber of a semiconductor manufacturing apparatus, the wafer support structure comprising: a baseplate connected to a radio frequency (RF) power source; a dielectric block, situated above the baseplate, the dielectric block having a bottom surface interfaced with the baseplate and a top surface for supporting a wafer when present; a plurality of gas supply channels disposed in the baseplate and extending from the baseplate and through the dielectric block to a location proximate to the top surface of the dielectric block; a first electrode embedded in a top half of the dielectric block, the first electrode being proximate and below the top surface of the dielectric block, wherein a top surface of the first electrode is substantially parallel to the top surface of the dielectric block, wherein the first electrode is connected to a direct current (DC) power source; and a second electrode embedded in a bottom half of the dielectric block, the second electrode being proximate and above a top surface of the baseplate such that a separation distance in the dielectric block is defined between the first electrode and the second electrode, the second electrode being electrically connected to the first electrode, wherein a bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.
地址 Fremont CA US