| 发明名称 |
FILM AND ORGANIC SEMICONDUCTOR DEVICE CONTAINING THE FILM |
| 摘要 |
A film comprising a polymer compound and a low molecular weight compound having carrier transportability, wherein the content of the low molecular weight compound is 5 to 40 parts by mass with respect to 100 parts by mass of the sum of the polymer compound and the low molecular weight compound, the diffraction intensity A specified by the following measuring method A is 3 to 50, and the intensity ratio (A/B) of the diffraction intensity A specified by the following measuring method A to the diffraction intensity B specified by the following measuring method B is 30 or less: (Measuring method A) the diffraction intensity A is the maximum diffraction intensity in a range of scattering vector of 1 nm−1 to 5 nm−1 in a profile obtained by an Out-of plane measuring method using a film X-ray diffraction method; (Measuring method B) the diffraction intensity B is the maximum diffraction intensity in a range of scattering vector of 10 nm−1 to 21 nm−1 in a profile obtained by an In-plane measuring method using a film X-ray diffraction method. |
| 申请公布号 |
US2017110665(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201515129028 |
申请日期 |
2015.04.15 |
| 申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
KANESAKA Sho;YOSHIDA Hidekazu;KASHIKI Tomoya;OKACHI Takayuki |
| 分类号 |
H01L51/00;C09D5/24;C09D7/12;C09D165/00 |
主分类号 |
H01L51/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A film comprising a polymer compound and a low molecular weight compound having carrier transportability, wherein
the content of the low molecular weight compound is 5 to 40 parts by mass with respect to 100 parts by mass of the sum of the polymer compound and the low molecular weight compound, the diffraction intensity A specified by the following measuring method A is 3 to 50, and the intensity ratio (A/B) of the diffraction intensity A specified by the following measuring method A to the diffraction intensity B specified by the following measuring method B is 30 or less:(Measuring method A)
the diffraction intensity A is the maximum diffraction intensity in a range of scattering vector of 1 nm−1 to 5 nm−1 in a profile obtained by an Out-of plane measuring method using a film X-ray diffraction method,(Measuring method B)
the diffraction intensity B is the maximum diffraction intensity in a range of scattering vector of 10 nm−1 to 21 nm−1 in a profile obtained by an In-plane measuring method using a film X-ray diffraction method. |
| 地址 |
Tokyo JP |
