ULTRATHIN SEMICONDUCTOR CHANNEL THREE-DIMENSIONAL MEMORY DEVICES

摘要

An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings are formed through the alternating stack to the substrate. After formation of memory film layers, a sacrificial cover material layer can be employed to protect the tunneling dielectric layer during formation of a bottom opening in the memory film layers. An amorphous semiconductor material layer can be deposited and optionally annealed in an ambient including argon and/or deuterium to form a semiconductor channel layer having a thickness less than 5 nm and surface roughness less than 10% of the thickness. Alternately or additionally, at least one interfacial layer can be employed on either side of the amorphous semiconductor material layer to reduce surface roughness of the semiconductor channel. The ultrathin channel can have enhanced mobility due to quantum confinement effects.

主权项

1. A three-dimensional memory device comprising:
an alternating stack of insulating layers and electrically conductive layers and located over a substrate; and memory stack structures extending through the alternating stack,wherein:
each memory stack structure comprises a semiconductor channel doped with argon.