TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER

摘要

Trench MOSFET with self-aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate. Each of the trenches comprises a gate electrode. The semiconductor device also includes a body contact trench formed in the semiconductor substrate between the gate trenches. The body contact trench has a lower width at the bottom of the body contact trench and an ohmic body contact implant beneath the body contact trench. The horizontal extent of the ohmic body contact implant is at least the lower width of the body contact trench.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; at least two gate trenches formed in said semiconductor substrate, wherein each of said trenches comprises a gate electrode; a body contact trench formed in said semiconductor substrate between said gate trenches, having a lower width at the bottom of said body contact trench; and an ohmic body contact implant beneath said body contact trench, wherein a horizontal extent of said ohmic body contact implant is at least said lower width of said body contact trench.