| 发明名称 |
BONDING STRUCTURES AND METHODS FORMING THE SAME |
| 摘要 |
A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening. |
| 申请公布号 |
US2017110401(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201514885719 |
申请日期 |
2015.10.16 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lii Mirng-Ji;Liu Chung-Shi;Ku Chin-Yu;Kuo Hung-Jui;Kalnitsky Alexander;Ho Ming-Che;Wu Yi-Wen;Chen Ching-Hui;Liu Kio-Chio |
| 分类号 |
H01L23/522;H01L21/48;H01L21/768;H01L23/528;H01L23/532 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a first dielectric layer over a conductive pad; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening; forming a template layer filling the first opening; forming a second opening in the template layer and the first dielectric layer , with a top surface of the conductive pad exposed to the second opening; and plating a conductive pillar in the second opening. |
| 地址 |
Hsin-Chu TW |
