发明名称 |
PROGRAMMING METHOD OF NON VOLATILE MEMORY DEVICE |
摘要 |
Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device includes: programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups. |
申请公布号 |
US2017110185(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615294995 |
申请日期 |
2016.10.17 |
申请人 |
HAHN Wook-ghee;YU Chang-yeon;LEE Joo-kwang |
发明人 |
HAHN Wook-ghee;YU Chang-yeon;LEE Joo-kwang |
分类号 |
G11C11/56;G11C16/04;G11C16/08;G11C16/34 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
1. A method of programming a nonvolatile memory device including a plurality of memory cells each storing multi-bit data, the method comprising:
programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups. |
地址 |
Hwaseong-si KR |