发明名称 HYBRID REFRESH WITH HIDDEN REFRESHES AND EXTERNAL REFRESHES
摘要 A memory subsystem enables satisfying refresh needs for a memory device with hidden refreshes performed by the memory device in response to Activate commands, and external refreshes to make up a difference between the number of hidden refreshes and a minimum number of total refreshes needed during a refresh window. With a hidden refresh the memory device executes the Activate command in one memory portion as indicated by the identified memory location of the command, and executes a refresh in a different portion, such as a different sub-bank. By combining external refreshes with hidden refreshes, the memory subsystem can enable hidden refreshes without the hidden refreshes causing a back-off or retry condition from the memory device to the memory controller.
申请公布号 US2017110178(A1) 申请公布日期 2017.04.20
申请号 US201615232745 申请日期 2016.08.09
申请人 Intel Corporation 发明人 BAINS Kuljit S.
分类号 G11C11/406;G11C11/4096;G06F3/06;G11C11/4093 主分类号 G11C11/406
代理机构 代理人
主权项 1. A memory device to interface in a memory subsystem, comprising: a first of multiple portions of memory; I/O (input/output) hardware to couple to an associated memory controller, and receive commands from the memory controller, including Activate commands directed to specified memory locations within the first portion; and control logic internal to the memory device, responsive to receipt of an Activate command, to execute the Activate command at a specified memory location of the first portion, and to execute a hidden refresh at a memory location in a second portion different from the first portion; wherein the control logic to further execute external refreshes from the memory controller for the first portion, where a total number of hidden refreshes and external refreshes are to satisfy a minimum number of total refreshes for the first portion during a refresh window.
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