| 发明名称 |
NONVOLATILE MEMORY DEVICES AND SOLID STATE DRIVES INCLUDING THE SAME |
| 摘要 |
A nonvolatile memory device includes a memory cell array, a voltage generator, and a control circuit. The voltage generator generates word-line voltages to be applied to the memory cell array. The control circuit generates control signals that control the voltage generator in response to a command and an address. The control circuit includes a hacking detection circuit. The hacking detection circuit disables an operation of the nonvolatile memory device when a hacking is detected, wherein the hacking is detected when an access sequence of the command and the address does not match a standard sequence of the nonvolatile memory device a consecutive number of times. |
| 申请公布号 |
US2017109527(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615296169 |
申请日期 |
2016.10.18 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG-SOO;JUNG BONG-KIL |
| 分类号 |
G06F21/55;G11C16/22 |
主分类号 |
G06F21/55 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory device, comprising:
a memory cell array; a voltage generator configured to generate word-line voltages to be applied to the memory cell array; and a control circuit configured to generate control signals that control the voltage generator in response to a command and an address, wherein the control circuit includes a hacking detection circuit configured to disable an operation of the nonvolatile memory device when a hacking is detected, wherein the hacking is detected when an access sequence of the command and the address does not match a standard sequence of the nonvolatile memory device a consecutive number of times. |
| 地址 |
SUWON-SI KR |
