Imprinted Memory

摘要

Although photolithography is the preferred pattern-transfer method for even the 10 nm electrically-programmable memory (EPM, which comprises only periodic patterns), imprint-lithography is the preferred method to form the sub-25 nm printed memory (which comprises at least one non-periodic data-pattern). Accordingly, the present invention discloses an imprinted memory.

主权项

1. A method of manufacturing an imprinted memory, comprising the steps of:
1) forming a plurality of bottom address lines; 2) forming a data-coding layer above said bottom address lines; 3) transferring a data-pattern to said data-coding layer using imprint-lithography; 4) forming a plurality of top address lines above said data-coding layer; wherein said data-pattern represents the data stored in said imprinted memory; the dimension of said data-pattern is less than 50 nm; and, said data-pattern is a non-periodic pattern.