发明名称 Test Line Patterns in Split-Gate Flash Technology
摘要 The present disclosure relates to a substrate having test line letters that are used to identify a test line on an integrated chip, while avoiding contamination of high-k metal gate processes, and a method of formation. In some embodiments, an integrated chip is disclosed. The integrated chip has a semiconductor substrate. A test line letter is arranged over the semiconductor substrate. The test line letter comprises a positive relief that protrudes outward from the semiconductor substrate in the shape of an alpha-numeric character. One or more dummy structures are arranged over the semiconductor substrate. The one or more dummy structures are proximate to a boundary of the test line letter.
申请公布号 US2017110202(A1) 申请公布日期 2017.04.20
申请号 US201514883791 申请日期 2015.10.15
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Wu Wei Cheng;Lien Jui-Tsung;Chu Fang-Lan;Lin Hong-Da;Chang Ku-Ning;Wang Yu-Chen
分类号 G11C29/02;H01L23/528;H01L29/51;G01R31/26;H01L27/115;H01L29/423;H01L21/3213;H01L21/768;H01L23/544;H01L29/49 主分类号 G11C29/02
代理机构 代理人
主权项 1. An integrated chip, comprising: a semiconductor substrate; a test line letter arranged over the semiconductor substrate, wherein the test line letter comprises a positive relief that protrudes outward from the semiconductor substrate in a shape of an alpha-numeric character; and one or more dummy structures arranged over the semiconductor substrate and proximate to a boundary of the test line letter.
地址 Hsin-Chu TW