发明名称 |
Test Line Patterns in Split-Gate Flash Technology |
摘要 |
The present disclosure relates to a substrate having test line letters that are used to identify a test line on an integrated chip, while avoiding contamination of high-k metal gate processes, and a method of formation. In some embodiments, an integrated chip is disclosed. The integrated chip has a semiconductor substrate. A test line letter is arranged over the semiconductor substrate. The test line letter comprises a positive relief that protrudes outward from the semiconductor substrate in the shape of an alpha-numeric character. One or more dummy structures are arranged over the semiconductor substrate. The one or more dummy structures are proximate to a boundary of the test line letter. |
申请公布号 |
US2017110202(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201514883791 |
申请日期 |
2015.10.15 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Wu Wei Cheng;Lien Jui-Tsung;Chu Fang-Lan;Lin Hong-Da;Chang Ku-Ning;Wang Yu-Chen |
分类号 |
G11C29/02;H01L23/528;H01L29/51;G01R31/26;H01L27/115;H01L29/423;H01L21/3213;H01L21/768;H01L23/544;H01L29/49 |
主分类号 |
G11C29/02 |
代理机构 |
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代理人 |
|
主权项 |
1. An integrated chip, comprising:
a semiconductor substrate; a test line letter arranged over the semiconductor substrate, wherein the test line letter comprises a positive relief that protrudes outward from the semiconductor substrate in a shape of an alpha-numeric character; and one or more dummy structures arranged over the semiconductor substrate and proximate to a boundary of the test line letter. |
地址 |
Hsin-Chu TW |