发明名称 LITHOGRAPHIC APPARATUS AND EXPOSURE METHOD
摘要 A method including determining a position of a first pattern in each of a plurality of target portions on a substrate, based on a fitted mathematical model, wherein the first pattern includes at least one alignment mark, wherein the mathematical model is fitted to a plurality of alignment mark displacements (dx, dy) for the alignment marks in the target portions, and wherein the alignment mark displacements are a difference between a respective nominal position of the alignment mark and measured position of the alignment mark; and transferring a second pattern onto each of the target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model includes polynomials Z1 and Z2: Z1=r2 cos(2θ) and Z2=r2 sin(2θ) in polar coordinates (r, θ) or Z1=x2−y2 and Z2=xy in Cartesian coordinates (x, y).
申请公布号 US2017108783(A1) 申请公布日期 2017.04.20
申请号 US201515315885 申请日期 2015.05.13
申请人 ASML Netherlands B.V. 发明人 KRAMER Pieter Jacob;GILIJAMSE Rogier Sebastiaan;LAMMERS Niels;SLOTBOOM Daan Maurits
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. An exposure method comprising: transferring a first pattern onto each of a plurality of target portions of a substrate, the first pattern including at least one alignment mark; measuring a plurality of positions of the respective transferred plurality of alignment marks and determining a plurality of alignment mark displacements (dx, dy) for the respective plurality of alignment marks as a difference between a respective predetermined nominal position of the alignment mark and the respective measured position of the alignment mark; fitting a mathematical model to the plurality of alignment mark displacements to obtain a fitted mathematical model, determining a position of the first pattern in each of the plurality of target portions, based on the fitted mathematical model; transferring a second pattern onto each of the plurality of target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model comprises polynomials Z1 and Z2: Z1=r2 cos(2θ) Z2=r2 sin(2θ) in polar coordinates (r,θ) orZ1=X2−y2 Z2=xy in Cartesian coordinates (x,y).
地址 Veldhoven NL