FIELD EFFECT DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

A field effect diode comprises: a substrate; a nucleation layer, a back barrier layer, a channel layer, a first barrier layer and a second barrier layer sequentially located on the substrate; and an anode and a cathode located on the second barrier layer, wherein a groove is formed in the second barrier layer, two-dimensional electron gas is formed at an interface between the first barrier layer and the channel layer except for a part of the interface under the groove when a reverse bias voltage or no external voltage is applied to the field effect diode, and is formed at all parts of the interface when a forward bias voltage is applied to the field effect diode.

主权项

1. A field effect diode, comprising:
a substrate; a nucleation layer located on the substrate; a back barrier layer located on the nucleation layer; a channel layer located on the back barrier layer; a first barrier layer located on the channel layer; a second barrier layer located on the first barrier layer; and an anode and a cathode located on the second barrier layer, wherein a groove is formed in the second barrier layer, the cathode is made of a first ohmic contact electrode, the anode is made of a composite structure comprising a second ohmic contact electrode and a Schottky electrode which is located in the groove and has a short circuit connection with the second ohmic contact electrode; wherein two-dimensional electron gas is formed at an interface between the first barrier layer and the channel layer except for a part of the interface under the groove when a reverse bias voltage or no external voltage is applied to the field effect diode, and is formed at all parts of the interface when a forward bias voltage is applied to the field effect diode.