发明名称 TFT SUBSTRATE STRUCTURE
摘要 The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.
申请公布号 US2017110483(A1) 申请公布日期 2017.04.20
申请号 US201615393690 申请日期 2016.12.29
申请人 Shenzhen China Star Optoelectronics Technology Co., Ltd. 发明人 ZHANG Hejing;TSENG Chihyuan;SU Chihyu;LI Wenhui;SHI Longqiang;LV Xiaowen
分类号 H01L27/12;H01L29/786;H01L27/32 主分类号 H01L27/12
代理机构 代理人
主权项 1. A TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different.
地址 Shenzhen CN