发明名称 HIGH VOLTAGE FAILURE RECOVERY FOR EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY SYSTEM
摘要 The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.
申请公布号 US2017109224(A1) 申请公布日期 2017.04.20
申请号 US201615390789 申请日期 2016.12.27
申请人 NXP USA, Inc. 发明人 SCOULLER ROSS S.;CUNNINGHAM JEFFREY C.;ANDRE DANIEL L.;COOTS TIM J.
分类号 G06F11/07 主分类号 G06F11/07
代理机构 代理人
主权项
地址 AUSTIN TX US