发明名称 SEMICONDUCTOR DEVICE AND DRIVING SYSTEM
摘要 A semiconductor device includes a high side driver, in which the high side driver has an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor. The switch transistor is controlled by a back gate of the switch transistor.
申请公布号 US2017111038(A1) 申请公布日期 2017.04.20
申请号 US201615390020 申请日期 2016.12.23
申请人 Renesas Electronics Corporation 发明人 FUKAMI Ikuo
分类号 H03K17/081;H01L27/088;H02M3/07;H02P7/28 主分类号 H03K17/081
代理机构 代理人
主权项 1. A semiconductor device including a high side driver, the high side driver comprising: an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor, wherein the switch transistor is controlled by a back gate of the switch transistor.
地址 Tokyo JP