发明名称 |
SEMICONDUCTOR DEVICE AND DRIVING SYSTEM |
摘要 |
A semiconductor device includes a high side driver, in which the high side driver has an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor. The switch transistor is controlled by a back gate of the switch transistor. |
申请公布号 |
US2017111038(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615390020 |
申请日期 |
2016.12.23 |
申请人 |
Renesas Electronics Corporation |
发明人 |
FUKAMI Ikuo |
分类号 |
H03K17/081;H01L27/088;H02M3/07;H02P7/28 |
主分类号 |
H03K17/081 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device including a high side driver, the high side driver comprising:
an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor, wherein the switch transistor is controlled by a back gate of the switch transistor. |
地址 |
Tokyo JP |