| 发明名称 |
FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A fin-type field effect transistor comprising a substrate, a plurality of insulators, at least one gate stack and strained material portions is described. The substrate has a plurality of fins thereon and the fin comprises a stop layer embedded therein. The plurality of insulators is disposed on the substrate and between the plurality of fins. The at least one gate stack is disposed over the plurality of fins and on the plurality of insulators. The strained material portions are disposed on two opposite sides of the at least one gate stack. |
| 申请公布号 |
US2017110579(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201514883636 |
申请日期 |
2015.10.15 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chang Che-Cheng;Lin Chih-Han |
| 分类号 |
H01L29/78;H01L29/66;H01L29/10 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin-type field effect transistor, comprising:
a substrate having a plurality of fins, wherein at least one of the plurality of fins comprises a stop layer embedded therein; a plurality of insulators, disposed on the substrate and between the plurality of fins; at least one gate stack, disposed over the plurality of fins and on the plurality of insulators; and strained material portions, disposed on two opposite sides of the at least one gate stack. |
| 地址 |
Hsinchu TW |
