发明名称 Near-Unity Photoluminescence Quantum Yield in MoS2
摘要 Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.
申请公布号 US2017110338(A1) 申请公布日期 2017.04.20
申请号 US201615294707 申请日期 2016.10.15
申请人 Amani Matin;Lien Der-Hsien;Kiriya Daisuke;Bullock James;Javey Ali 发明人 Amani Matin;Lien Der-Hsien;Kiriya Daisuke;Bullock James;Javey Ali
分类号 H01L21/465;H01L21/02 主分类号 H01L21/465
代理机构 代理人
主权项 1. A method of passivating and repairing a 2D transition metal dichalcogenide (TMDC) to enhance the photoluminescence quantum yield (QY) comprising: dissolving bis(trifluoromethane)sulfonimide (TFSI) in 1,2-dichloroethane (DCE) to make a solution; diluting the solution with 1,2-dichlorobenzene (DCB) or DCE to make a TFSI solution; immersing a TMDC sample in the TFSI solution; and annealing the TMDC sample at an elevated temperature.
地址 Berkeley CA US