发明名称 |
Near-Unity Photoluminescence Quantum Yield in MoS2 |
摘要 |
Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials. |
申请公布号 |
US2017110338(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615294707 |
申请日期 |
2016.10.15 |
申请人 |
Amani Matin;Lien Der-Hsien;Kiriya Daisuke;Bullock James;Javey Ali |
发明人 |
Amani Matin;Lien Der-Hsien;Kiriya Daisuke;Bullock James;Javey Ali |
分类号 |
H01L21/465;H01L21/02 |
主分类号 |
H01L21/465 |
代理机构 |
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代理人 |
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主权项 |
1. A method of passivating and repairing a 2D transition metal dichalcogenide (TMDC) to enhance the photoluminescence quantum yield (QY) comprising:
dissolving bis(trifluoromethane)sulfonimide (TFSI) in 1,2-dichloroethane (DCE) to make a solution; diluting the solution with 1,2-dichlorobenzene (DCB) or DCE to make a TFSI solution; immersing a TMDC sample in the TFSI solution; and annealing the TMDC sample at an elevated temperature. |
地址 |
Berkeley CA US |