SEMICONDUCTOR STRUCTURE WITH ENHANCED CONTACT AND METHOD OF MANUFACTURE THE SAME

摘要

A method of forming a semiconductor structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure from the fin structure; (iii) forming a sacrificial structure surrounding the epitaxy structure; (iv) forming a dielectric layer covering the sacrificial structure; (v) forming an opening passing through the dielectric layer to partially expose the sacrificial structure; (vi) removing a portion of the sacrificial structure to expose a portion of the epitaxy structure; and (vii) forming a contact structure in contact with the exposed portion of the epitaxy structure. A semiconductor structure is disclosed herein as well.

主权项

1. A method of forming a semiconductor structure, comprising:
forming a first fin structure and a second fin structure on a substrate; epitaxially growing a first epitaxy structure and a second epitaxy structure respectively from the first and second fin structures, wherein the first epitaxy structure is spaced apart from the second epitaxy structure by a gap; epitaxially growing a first sacrificial structure and a second sacrificial structure respectively from the first and second epitaxy structures such that the first and second sacrificial structures are merged at the gap, and each of the first and second sacrificial structures has a material different from a material of the first and second epitaxy structures; forming a dielectric layer covering the first and second sacrificial structures; forming an opening passing through the dielectric layer to partially expose the first and second sacrificial structures; removing portions of the first and second sacrificial structures to expose portions of the first and second epitaxy structures; and forming a contact structure in contact with the exposed portions of the first and second epitaxy structures.