| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium. |
| 申请公布号 |
US2017110576(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615290240 |
申请日期 |
2016.10.11 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Sung-Soo;PARK Gi-Gwan;KANG Sang-Koo;RYU Koung-Min;LEE Jae-Hoon;HA Tae-Won |
| 分类号 |
H01L29/78;H01L29/66;H01L29/40;H01L29/423;H01L29/51 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a gate spacer on a substrate, the gate spacer defining a trench; a gate electrode filling the trench; and an interlayer insulating layer on the substrate, the interlayer insulating layer surrounding the gate spacer, the interlayer insulating layer including a first portion having germanium. |
| 地址 |
Suwon-si KR |
