Semiconductor Device with Control Structure Including Buried Portions and Method of Manufacturing

摘要

A semiconductor device includes transistor cells and control structures. The transistor cells include source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. The control structures include first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions between the first portions and separated from the first surface by portions of the semiconductor mesa, and third portions connecting the first and the second portions and separated from the first surface by portions of the semiconductor mesa. Constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa.

主权项

1. A semiconductor device, comprising:
transistor cells including source zones of a first conductivity type and body zones of a second conductivity type, wherein the source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body; and control structures that comprise first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions between the first portions and separated from the first surface by portions of the semiconductor mesa, and third portions connecting the first and the second portions and separated from the first surface by portions of the semiconductor mesa, wherein constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa.