MEMORY WRITE TRACKING DEVICE AND METHOD

摘要

A memory write tracking device is applied to a data write operation to at least a memory cell row. The memory write tracking device includes a dummy cell row, a variation sensor, a judging device and a word-line pulse generator. The dummy cell row includes a plurality of dummy memory cells for simulating the data write operation to the memory cell row. The variation sensor senses a set of circuit parameters for write ability of the memory cell row. The judging device determines a threshold number according to a change of the set of circuit parameters and sends an enabling signal when a threshold number of the dummy memory cells have been successfully written with the data. The word-line pulse generator determines a write cycle of the data write operation in response to the enabling signal. An associated memory write tracking method is also provided.

主权项

1. A memory write tracking device applied to a data write operation to at least a memory cell row, the memory write tracking device comprising:
a dummy cell row comprising a plurality of dummy memory cells, data being written into the dummy memory cells in response to a first control signal on a dummy word line; a variation sensor for sensing a set of circuit parameters for write ability of the memory cell row; a judging device electrically connected to the dummy memory cells and the variation sensor, for determining a threshold number according to a change of the set of circuit parameters, and sending an enabling signal when the threshold number of the dummy memory cells have been successfully written with the data; and a word-line pulse generator electrically connected to the judging device, the memory cell row and the dummy word line, for generating the first control signal to the dummy word line, generating a second control signal to control the data write operation to the memory cell row, and determining a write cycle of the second control signal in response to the enabling signal.