| 发明名称 |
SEMICONDUCTOR PROCESS SIMULATION DEVICE AND SIMULATION METHOD THEREOF |
| 摘要 |
A semiconductor process simulation method includes classifying a semiconductor process simulation into a plurality of blocks based on an annealing simulation, performing a shape simulation corresponding to a block selected from the plurality of blocks, and performing at least two ion implantation simulations among a plurality of ion implantation simulations corresponding to the selected block in parallel, based on result data of the shape simulation corresponding to the selected block. |
| 申请公布号 |
US2017109460(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615277480 |
申请日期 |
2016.09.27 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG SUNG-HWAN;KIM SUNGCHUL;DOH JISEONG;LEE WONSOK |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor process simulation method comprising:
classifying a semiconductor process simulation into a plurality of blocks based on an annealing simulation; performing a shape simulation corresponding to a block selected from the plurality of blocks; and performing at least two ion implantation simulations among a plurality of ion implantation simulations corresponding to the selected block in parallel, based on result data of the shape simulation corresponding to the selected block. |
| 地址 |
Suwon-si KR |
