发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements. A plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder.
申请公布号 US2017111037(A1) 申请公布日期 2017.04.20
申请号 US201615282215 申请日期 2016.09.30
申请人 FUJI ELECTRIC CO., LTD. 发明人 SHIIGI Takashi;YAMADA Shoji;HARADA Yuichi;HOSHI Yasuyuki
分类号 H03K17/081;H01L23/535;H01L23/498;H01L21/48;H01L23/00;H01L29/16;H01L21/66 主分类号 H03K17/081
代理机构 代理人
主权项 1. A semiconductor device comprising: a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor material having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements, wherein a plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder.
地址 Kawasaki-shi JP