Semiconductor Die Contact Structure and Method

摘要

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

主权项

1. A semiconductor device comprising:
a metal contact over a substrate, the metal contact having a thickness of at least 15,000 Å, wherein a first material is located throughout the metal contact; a contact pad in electrical connection with the metal contact, wherein an external sidewall of the contact pad is located directly over the metal contact; a first passivation layer located at least partially between the metal contact and the contact pad in a direction perpendicular to a major surface of the substrate; a plurality of dielectric layers located between the metal contact and the substrate, the plurality of dielectric layers comprising an extra low-k dielectric material; an underbump metallization in physical contact with the contact pad; a second passivation layer located at least partially between the underbump metallization and the contact pad; and an external contact in physical contact with the underbump metallization.