发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1. |
申请公布号 |
US2017110399(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615394752 |
申请日期 |
2016.12.29 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Usami Tatsuya;Miura Yukio;Tsuchiya Hideaki |
分类号 |
H01L23/528;H01L23/522;H01L21/265;H01L21/02;H01L23/532;H01L21/768 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |