METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES

摘要

Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); Rx[—C═N(Rz)]y; and R(3-a)—N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.

主权项

1. A method for minimizing sidewall damage during a low k etch process to a difference of less than 11 nm before and after a HF rinse, the method comprising the steps of:
Depositing a patterned mask layer on a low k layer, the patterned mask layer having an opening that defines an area to produce an aperture in the low k layer; Etching the low k layer with a plasma activated vapor of a nitrogen containing etching composition to produce the aperture in the low k layer, the aperture having a first defined sidewall width, wherein the nitrogen containing etching composition comprises an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); Rx[—C═N(Rz)]y; and R(3-x)—N—Hx, wherein x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5; and removing residual polymer from the aperture to produce a second defined sidewall width, a difference between the first and second defined sidewall widths ranging between 0 nm to 11 nm.