| 发明名称 |
ERROR CHARACTERIZATION AND MITIGATION FOR 16NM MLC NAND FLASH MEMORY UNDER TOTAL IONIZING DOSE EFFECT |
| 摘要 |
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count. |
| 申请公布号 |
US2017110199(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615298171 |
申请日期 |
2016.10.19 |
| 申请人 |
California Institute of Technology |
发明人 |
Li Yue;Bruck Jehoshua |
| 分类号 |
G11C16/34;G11C16/04;G11C16/10;G11C11/56;G11C16/16 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A data device comprising:
a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme; and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count. |
| 地址 |
Pasadena CA US |
