METAL STRAP FOR DRAM/FINFET COMBINATION

摘要

A metal strap is formed in a middle-of-line (MOL) process for communication between an eDRAM and a FinFET. An oxide is deposited in a trench over the eDRAM to prevent development of an epitaxial film prior to formation of the metal strap. The result is an epiless eDRAM strap in a FinFET.

主权项

1. A structure for a semiconductor device, the structure comprising:
a storage capacitor formed in a deep trench of a semiconductor substrate; a transistor formed on the semiconductor substrate; a fin of a transistor, formed with an adjacent oxide deposit; an epitaxial film grown on the fin of the transistor; a metal strap deposited in an opening, the metal strap connecting the transistor to the storage capacitor; wherein: the adjacent oxide deposit is located above, and in contact with, a conductive region of the storage capacitor.