Semiconductor Device

摘要

A semiconductor device with a small number of transistors is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a first wiring, and a second wiring. The first transistor includes a first gate and a second gate. The first gate and the second gate overlap with each other with a semiconductor therebetween. The first wiring and the second wiring are supplied with a high power supply potential and a low power supply potential, respectively. A first terminal of the first transistor is electrically connected to the first gate and the first wiring. A second terminal of the first transistor is electrically connected to the second gate. The second terminal of the first transistor is electrically connected to the second wiring through the second transistor and the third transistor. The first transistor, the second transistor, and the third transistor are preferably n-channel transistors.

主权项

1. A semiconductor device comprising:
a first transistor; a second transistor; a third transistor; a first wiring; and a second wiring, wherein the first transistor comprises a first gate and a second gate, wherein the first gate and the second gate overlap with each other with a semiconductor therebetween, wherein the first wiring is configured to transmit a high power supply potential, wherein the second wiring is configured to transmit a low power supply potential, wherein a first terminal of the first transistor is electrically connected to the first gate, wherein the first terminal of the first transistor is electrically connected to the first wiring, wherein a second terminal of the first transistor is electrically connected to the second gate, wherein the second terminal of the first transistor is electrically connected to the second wiring through the second transistor and the third transistor, and wherein the first transistor, the second transistor, and the third transistor are n-channel transistors.