METHOD FOR ESTIMATING DEPTH OF LATENT SCRATCHES IN SiC SUBSTRATES

摘要

This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

主权项

1. A method for estimating a depth of latent scratches of a SiC substrate comprising:
an etching step of etching a surface of the SiC substrate by performing heat treatment under Si atmosphere after performing mechanical processing, the SiC substrate made of, at least in the surface thereof, single crystal SiC; a measurement step of measuring a surface roughness of the SiC substrate in which the etching step has been performed; and an estimation step of estimating, based on a result obtained in the measurement step, the depth of latent scratches or the presence or absence of latent scratches of the SiC substrate before the etching step.