METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH INTERCONNECT STRUCTURE

摘要

A method includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The method includes an adhesion layer formed in the dielectric layer and over the first metal layer, and the adhesion layer is a discontinuous layer. The method includes a second metal layer formed in the dielectric layer, and the adhesion layer is formed between the second metal layer and the dielectric layer. The second metal layer includes a via portion and a trench portion over the via portion, and the trench portion is wider than the via portion.

主权项

1. A method for forming a semiconductor device structure, comprising:
forming a first metal layer over a substrate and an etch stop layer over the first metal layer; forming a dielectric layer over the etch stop layer; forming a trench opening and a via opening in the dielectric layer; depositing an adhesion layer on sidewalls and bottom surfaces of the trench opening and the via opening; removing a portion of the etch stop layer directly above the first metal layer and removing a portion of the adhesion layer to expose a portion of the dielectric layer; and filling a second metal layer in the via opening and the trench opening, wherein the second metal layer is electrically connected to the first metal layer.