| 发明名称 | Semiconductor device | ||
| 摘要 | The present invention is to provide a semiconductor device in which the generation of the eddy current in a metal flat plate is reduced, and the Q value of the RF circuit of the semiconductor device is improved even using the metal flat plate as a support. | ||
| 申请公布号 | US9627289(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514964121 | 申请日期 | 2015.12.09 |
| 申请人 | J-DEVICES CORPORATION | 发明人 | Ikemoto Yoshihiko;Sawachi Shigenori;Taniguchi Fumihiko;Katsumata Akio |
| 分类号 | H01L23/473;H01L23/31;H01L23/522;H01L23/00;H01L23/552;H01L23/498 | 主分类号 | H01L23/473 |
| 代理机构 | Flynn, Thiel, Boutell & Tanis, P.C. | 代理人 | Flynn, Thiel, Boutell & Tanis, P.C. |
| 主权项 | 1. A semiconductor device comprising: a metal flat plate; a first insulating material layer formed on one main surface of the metal flat plate; a semiconductor chip mounted on the surface of the first insulating material layer via an adhesion layer with an element circuit surface oriented upward; a second insulating material layer that seals the semiconductor chip and the periphery thereof; a wiring layer that is provided in the second insulating material layer and is partially extended to a peripheral region of the semiconductor chip; a conductive portion that is provided in the second insulating material layer and connects an electrode on the element circuit surface of the semiconductor chip and the wiring layer; and an external electrode formed on the wiring layer. | ||
| 地址 | Usuki-shi, Oita JP | ||