| 发明名称 |
Method for building vertical pillar interconnect |
| 摘要 |
An exemplary method includes forming a vertical pillar overlying or laterally displaced from a bond pad overlying a semiconductor substrate, and applying a discrete solder sphere in combination with one of a solder paste or flux on a top surface of the pillar, wherein the one of the solder paste or flux is defined by at least one photoresist layer. The method may include applying a solder sphere and/or solder flux in different combinations on top surfaces of different first and second pillars. |
| 申请公布号 |
US9627254(B2) |
申请公布日期 |
2017.04.18 |
| 申请号 |
US201313826987 |
申请日期 |
2013.03.14 |
| 申请人 |
FlipChip International, LLC |
发明人 |
Burgess Guy F.;Curtis Anthony P.;Stout Eugene A.;Tessier Theodore G.;Thompson Lillian C. |
| 分类号 |
H01L21/44;H01L21/768;H01L21/56;H01L23/00 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a vertical pillar overlying or laterally displaced from a bond pad overlying a semiconductor substrate; applying a discrete solder sphere in combination with one of a solder paste or flux on a top surface of the pillar, wherein the one of the solder paste or flux is defined by at least one photoresist layer; and a passivation layer overlies the semiconductor substrate and has an opening to expose the bond pad, the method further comprising: prior to forming the vertical pillar, depositing a seed layer directly onto the passivation layer and the bond pad. |
| 地址 |
Phoenix AZ US |
