Manufacturing method of semiconductor device

摘要

The reliability of a semiconductor device is improved. In a manufacturing method, a film to be processed is formed over a circular semiconductor substrate, and a resist layer whose surface has a water-repellent property is formed thereover. Subsequently, the water-repellent property of the resist layer in the outer peripheral region of the circular semiconductor substrate is lowered by selectively performing first wafer edge exposure on the outer peripheral region of the semiconductor substrate, and then liquid immersion exposure is performed on the resist layer. Subsequently, second wafer edge exposure is performed on the outer peripheral region of the circular semiconductor substrate, and then the resist layer, on which the first wafer edge exposure, the liquid immersion exposure, and the second wafer edge exposure have been performed, is developed, so that the film to be processed is etched by using the developed resist layer.

主权项

1. A manufacturing method of a semiconductor device, comprising the steps of:
(a) providing a semiconductor substrate whose outer periphery is approximately circular; (b) forming a film to be processed over the semiconductor substrate; (c) forming a chemically amplified resist layer over the film to be processed; (d) performing first wafer edge exposure in which the chemically amplified resist layer, located in a region having a first width from the outer periphery of the semiconductor substrate, is irradiated with first exposure light; (e) performing liquid immersion exposure in which the chemically amplified resist layer is irradiated with second exposure light; (f) performing second wafer edge exposure in which the chemically amplified resist layer, located in a region having a second width from the outer periphery of the semiconductor substrate, is irradiated with third exposure light; (g) after the step (f), developing the chemically amplified resist layer in order to form a resist pattern having a first pattern by removing the chemically amplified resist layer located in a region irradiated with the second exposure light and the third exposure light; and (h) after the step (g), etching the film to be processed such that the film to be processed has the first pattern.