Composite substrate, semiconductor device including the same, and method of manufacturing the same

摘要

The invention provides a composite substrate, a semiconductor device including such composite substrate, and a method of making the same. In particular, the composite substrate of the invention includes a nitride-based single crystal layer transformed from a nitride-based poly-crystal layer, which has a specific thickness of approximately between 2 nm and 100 nm.

主权项

1. A composite substrate, which is heteroepitaxy, comprising:
a substrate; and a nitride-based single crystal layer, which is formed to cover an upper surface of the substrate, wherein the nitride-based single crystal layer is transformed from a annealed nitride-based poly-crystal layer which is formed with a manufacturing process of atomic layer deposition (ALD) and/or a plasma-enhanced ALD process to cover the upper surface of the substrate; the nitride-based poly-crystal layer has a thickness of approximately between 2 nm and 100 nm; wherein the composite substrate has a threading dislocation density less than 1×106 cm−2; wherein the nitride-based single crystal layer has an E2 peak at 567.4 cm−1 Raman shift in a Raman scattering spectroscopy.