| 发明名称 | Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer | ||
| 摘要 | A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed. | ||
| 申请公布号 | US9627484(B1) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514880918 | 申请日期 | 2015.10.12 |
| 申请人 | International Business Machines Corporation | 发明人 | Ando Takashi;Bajaj Mohit;Hook Terence B.;Pandey Rajan K.;Sathiyanarayanan Rajesh |
| 分类号 | H01L21/8238;H01L29/10;H01L27/088;H01L29/51;H01L29/78;H01L29/66;H01L21/3115 | 主分类号 | H01L21/8238 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A method for adjusting a threshold voltage, comprising: depositing a strained liner on a gate structure to strain a gate dielectric; adjusting threshold voltage of a transistor after the strained liner is deposited by controlling an amount of strain in the strained liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region; and removing the strained liner. | ||
| 地址 | Armonk NY US | ||