Method of manufacturing a magnetic memory device

摘要

A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.

主权项

1. A method of manufacturing a magnetic memory device, said method comprising:
forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, at least one of the lower magnetic layer and the upper magnetic layer comprises boron; forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, the magnetic tunnel junction pattern including a side surface; forming a boron-absorption layer covering the side surface of the magnetic tunnel junction pattern; and performing a heat treatment process to cause boron included in the at least one of the upper and lower magnetic layers to be absorbed by the boron-absorption layer, wherein the heat treatment process is performed in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen, wherein the heat treatment process comprises a first heat treatment process performed in a gaseous atmosphere including hydrogen, and a second heat treatment process performed in a gaseous atmosphere including oxygen.