发明名称 Semiconductor device
摘要 An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface of the optical fiber, and is received from an emitting surface to the photodiode through the optical fiber. Specifically, the incident surface of the optical fiber is arranged so as to be opposed to a side surface portion of the wide gap semiconductor element forming portion, so that the emitted light at the time of light emission of the wide gap semiconductor element is incident on the incident surface.
申请公布号 US9627571(B2) 申请公布日期 2017.04.18
申请号 US201414223149 申请日期 2014.03.24
申请人 Mitsubishi Electric Corporation 发明人 Kaguchi Naoto;Tarui Yoichiro
分类号 H01L31/16;H01L31/167;G01K7/01 主分类号 H01L31/16
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A semiconductor device comprising: a semiconductor element that is formed of a wide gap semiconductor material having light-emitting property, and that emits light during operation; a current detecting portion that detects a current flowing during the operation of said semiconductor element as an operating current; an optical fiber on which emitted light during the operation of said semiconductor element is incident; and a photodiode that receives said emitted light obtained by propagation through said optical fiber, wherein said current detecting portion is electrically and optically independent from said optical fiber and said photodiode.
地址 Tokyo JP