Semiconductor device and method of fabricating the same

摘要

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate with an active pattern, a gate electrode provided at the active pattern, and a gate capping structure disposed above the gate electrode. The gate capping structure may include two or more gate capping patterns with different properties from each other, and the use of the gate capping structure makes it possible to form contact plugs in a self-aligned manner and improve operational speed and characteristics of the semiconductor device.

主权项

1. A semiconductor device comprising:
a substrate with an active pattern; a gate electrode provided at the active pattern; a gate capping structure disposed above the gate electrode; spacer structures provided on opposite sidewalls of the gate electrode; and contact plugs comprising:
a first contact plug provided on a first side of the gate electrode; andsecond contact plug provided on a second side opposite to the first side of the gate electrode, wherein the gate capping structure comprises a first gate capping pattern and a second gate capping pattern sequentially stacked on the gate electrode, wherein the first gate capping pattern comprises a horizontally-extended portion extending parallel to a top surface of the substrate and vertically-extended portions extending upward from both edges of the horizontally-extended portion, wherein a top surface of the second gate capping pattern and a top surface of each of the spacer structures are coplanar, and wherein a horizontal distance between the first and the second plugs measured above the top surface of the second capping pattern is greater than a width of the second gate capping pattern.