Semiconductor device

摘要

A semiconductor device includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, source and drain electrodes over the second semiconductor layer, a gate electrode, and a first field plate electrode. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion thinner than the first semiconductor portion. The source and drain electrodes are electrically connected to the second semiconductor layer. The gate electrode is provided over the second semiconductor layer between the source electrode and the drain electrode. The first field plate electrode is provided over the second semiconductor layer and includes a portion that extends from a location over the gate electrode toward the drain electrode and has an end portion that is positioned over the second semiconductor portion.

主权项

1. A method of manufacturing a compound semiconductor device, comprising:
providing a first compound semiconductor layer; providing a second compound semiconductor layer on the first compound semiconductor layer, wherein the thickness of the second compound semiconductor layer includes a relatively thick portion and at least one thinner portion; depositing, as the second compound semiconductor layer, a first sub-layer of a compound semiconductor material on the first compound semiconductor layer; depositing an etch stop layer on the first sub-layer of a compound semiconductor material; depositing a second sub-layer of a compound semiconductor material on the etch stop layer; and etching an opening through the second sub-layer of a compound semiconductor layer and stopping the etching on the etch stop layer.