| 发明名称 | Semiconductor device having an inactive-fin | ||
| 摘要 | A semiconductor device includes a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate. A gate electrode crosses the multi-fin active region. Source/drain regions are disposed on the sub-fins except a first sub-fin and a last sub-fin. A contact plug is disposed on the source/drain regions. | ||
| 申请公布号 | US9627481(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201615051056 | 申请日期 | 2016.02.23 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Park Byungjae;Kim Myeongcheol;Cho Hagju |
| 分类号 | H01L29/08;H01L29/78;H01L27/088 | 主分类号 | H01L29/08 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A semiconductor device, comprising: a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate; a gate electrode crossing the multi-fin active region; source/drain regions disposed on the sub-fins except a first sub-fin and a last sub-fin; and a contact plug disposed on the source/drain regions. | ||
| 地址 | Suwon-si, Gyeonggi-Do KR | ||