发明名称 Address translation for a non-volatile memory storage device
摘要 Techniques are described for accessing data from a storage device. In one example, the storage device may include a storage medium comprising non-volatile memory, a network connection, and one or more processing entities. The one or more processors may be configured to receive a request from the network connection at the non-volatile memory storage device for accessing data associated with a file system object, the request comprising a virtual address offset, a file object identifier and a size of the data access, perform, at a flash translation layer of a storage device software stack executing on the one or more processing entities of the storage device, a translation from the virtual address offset to a physical address for the data stored on the non-volatile memory, using the virtual address offset and the file object identifier, and access the data from the physical address from the storage medium.
申请公布号 US9626288(B2) 申请公布日期 2017.04.18
申请号 US201414460216 申请日期 2014.08.14
申请人 Skyera, LLC 发明人 Danilak Radoslav;Bothra Amit;Pruthi Arvind
分类号 G06F12/00;G06F13/00;G06F13/28;G06F12/02 主分类号 G06F12/00
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A non-volatile memory storage device comprising: a non-transitory storage medium comprising non-volatile memory; a network connection for receiving data read and write access requests to the non-volatile memory of the non-transitory storage medium from a network; a processing entity of the non-volatile memory storage device comprising a flash translation layer of a storage device software stack executing on the processing entity, the flash translation layer configured to: receive an access request from the network connection at the non-volatile memory storage device for accessing data associated with a file system object, the access request comprising a virtual address offset, a file object identifier and a size of data of the access request;perform, at the flash translation layer of the storage device software stack executing on the processing entity of the non-volatile memory storage device, a translation from the virtual address offset to a physical address of the data of the access request stored on the non-volatile memory using the virtual address offset and the file object identifier; andaccess the data of the access request stored at the physical address of the non-volatile memory of the non-transitory storage medium;wherein the data of the access request associated with the file system object is accessed by the flash translation layer for performing a modify operation followed by performing a write operation to the virtual address offset associated with the file system object;wherein the data of the access request associated with the file system object is modified by the flash translation layer by writing to a log-structured file of a log-structured file system of the non-volatile memory, wherein the modify operation for the data of the access request or a portion of the data of the access request is performed by the flash translation layer by using a log-structured write only once between receiving the access request from the network via the network connection for modifying the data or the portion of the data received from the network connection and completing the write operation to the physical address of the non-volatile memory;wherein the translation from the virtual address offset to the physical address for the data of the access request stored on the non-volatile memory performed by the flash translation layer is at least partially based on global wear leveling performed by the flash translation layer, wherein the global wear leveling changes the virtual address offset to a different physical address than the physical address generated by the flash translation layer as a result of the translation from the virtual address offset to the physical address of the data stored on the non-volatile memory to reduce wear caused by repeated data accesses to a same physical location on the non-volatile memory.
地址 San Jose CA US
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