Oxide film, integrated circuit device, and methods of forming the same

摘要

A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

主权项

1. A method of manufacturing an integrated circuit (IC) device, the method comprising:
forming a doped mold film on a substrate having a conductive region while continuously varying a flow rate of at least one dopant source supplied to the substrate, the doped mold film having a dopant concentration gradient which continuously varies in a thickness direction of the doped mold film; forming a capping mold film on the doped mold film; forming a support film on the capping mold film; forming a hole in the support film, the capping mold film, and the doped mold film by etching the support film, the capping mold film, and the doped mold film, the hole exposing the conductive region; and forming an electrode within the hole, the electrode having an outer sidewall facing a sidewall of the support film, a sidewall of the capping mold film, and a sidewall of the doped mold film, each of which is exposed within the hole.