Phase change memory devices and systems having reduced voltage threshold drift and associated methods

摘要

Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory. A pre-read pulse can be delivered across a select device and a phase change material of a phase change memory cell to at least partially reset the voltage threshold drift of the select device while maintaining a program state of the phase change material.

主权项

1. A phase change memory device, comprising:
an array of phase change memory (PCM) cells coupled together by an array of word lines and an array of bit lines, each PCM cell further comprising:
a select device (SD);a phase change material (PM) coupled to the SD, the PM having a program state; andcircuitry coupled to the array of PCM cells, the circuitry configured to:
select a PCM cell; anddeliver a pre-read pulse across the SD and the PM of the PCM cell, wherein the pre-read pulse is configured to at least partially reset a threshold voltage (Vt) drift of the SD while maintaining the program state of the PM.