发明名称 |
Method for interconnecting stacked semiconductor devices |
摘要 |
A method for making a semiconductor device includes forming rims on first and second dice. The rims extend laterally away from the first and second dice. The second die is stacked over the first die, and one or more vias are drilled through the rims after stacking. The semiconductor device includes redistribution layers extending over at least one of the respective first and second dice and the corresponding rims. The one or more vias extend through the corresponding rims, and the one or more vias are in communication with the first and second dice through the rims. |
申请公布号 |
US9627358(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201314368774 |
申请日期 |
2013.09.27 |
申请人 |
Intel Corporation |
发明人 |
Zhao Junfeng |
分类号 |
H01L21/50;H01L25/00;H01L25/065;H01L23/00;H01L21/56 |
主分类号 |
H01L21/50 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A method for making a stacked semiconductor device comprising:
molding rims on a first die and a second die, the rims extending laterally away from the first and second dice, each of the rims including upper and lower rim faces, and the first and second dice are between the respective upper and lower rim faces; stacking the second die over the first die, stacking the second die over the first die includes:
engaging an upper rim face of the first die with a lower rim face of the second die, andadhering the upper rim face of the first die to the lower rim face of the second die; and drilling one or more vias through the rims after stacking, the one or more vias extending between the first and second dice. |
地址 |
Santa Clara CA US |